? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c; r gs = 1 m 100 v v gs continous 20 v v gsm transient 30 v i d25 t c = 25 c 133 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 400 a i ar t c = 25 c60a e ar t c = 25 c 100 mj e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 p d t c = 25 c 300 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force 20..120/4.6..20 nm/lb weight 5g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 8 ma 3.0 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 150 c 250 a v gs = 0 v t j = 175 c 1000 a r ds(on) v gs = 10 v, i d = 100 a, note 1 9 m v gs = 15 v, i d = 400a, note 1 6.0 m g = gate d = drain s = source ds99238e(03/06) polar tm hiperfet power mosfet electrically isolated tab ixfr 200n10p n-channel enhancement mode fast recovery diode, avavanche rated v dss = 100 v i d25 = 133 a r ds(on) 9m t rr 150 ns isolated tab s g d isoplus247 (ixfr) e153432 features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<30pf) z fast recovery intrinsic diode z avalanche voltage rated applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly z space savings z high power density
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 200n10p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 100 a, note 1 60 97 s c iss 7600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 2900 pf c rss 860 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 60 a 35 ns t d(off) r g = 3.3 (external) 150 ns t f 90 ns q g(on) 235 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 100 a 50 nc q gd 135 nc r thjc 0.5 k/w r thcs 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 200 a i sm repetitive 400 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = 25 a, di/dt = 100 a/ s 150 ns q rm v r = 50 v, v gs = 0 v 0.4 c i rm 6a isoplus247 outline notes; 1. pulse test, t 300 s, duty cycle d 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved ixfr 200n10p fig. 2. exte nde d output characte ris tics @ 25 o c 0 50 100 150 200 250 300 350 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 25 50 75 100 125 150 175 200 0 0.5 1 1.5 2 2.5 3 3.5 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 1. output characteristics @ 25 o c 0 25 50 75 100 125 150 175 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v fig. 4. r ds(on ) norm alize d to i d = 100a value vs. junction tem perature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalized i d = 200a i d = 100a v gs = 10v fig. 5. r ds(on) norm alize d to i d = 100a value vs . drain curre nt 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 50 100 150 200 250 300 350 i d - amperes r d s ( o n ) - normalized t j = 25 o c t j = 175 o c v gs = 10v v gs = 15v - - - - fig. 6. drain curre nt vs . cas e tem perature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 200n10p fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 175 200 225 250 q g - nanocoulombs v g s - volts v ds = 50v i d = 100a i g = 10m a fig. 7. input adm ittance 0 50 100 150 200 250 300 44.555.566.5 77.5 88.5 9 v g s - volts i d - amperes t j = 150 o c 25 o c -40 o c fig. 8. transconductance 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 350 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 350 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig . 12. fo r w ar d -bias safe operating area 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 100s 1m s dc t j = 175 o c t c = 25 o c r ds(on) lim it 10m s
? 2006 ixys all rights reserved ixfr 200n10p fig. 13. maximum transient thermal resistance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - oc / w ixys ref: t_200n10p (88) 03-22-06-e.xls
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